ACE7310M datasheet(1/6 Pages) ACE

Part #	ACE7310M

Description	N-Channel 30-V (D-S) MOSFET

PDF	6 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE7310M

N-Channel 30-V (D-S) MOSFET

VER 1.1

1

Description

The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a kelvin connection to the source, which may be used to bypass the source inductance.

Features



Low rDS(on) trench technology



Low thermal impedance



Fast switching speed

Applications



DC/DC Conversion



Power Routing



Motor Drives

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

a

TA=25

OC

ID

21

A

TA=70

OC

17.2

Pulse Drain Current

b

IDM

80

Continuous Drain Current (Diode Continuous)

a

IS

4.7

A

Power Dissipation

a

TA=25

OC

PD

3.5

W

TA=70

OC

2

Operating Junction and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t≦10sec

RθJA

35

℃/W

Steady State

81

℃/W

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (mΩ)

ID(A)

30

5.5@ VGS = 10V

21

7.8 @ VGS = 4.5V

17

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ACE7310M Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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