© Semiconductor Components Industries, LLC, 2005

February, 2005 − Rev. 6

1

Publication Order Number:

MBD54DWT1/D

MBD54DWT1

Preferred Device

Dual Schottky Barrier

Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Forward Power Dissipation

Derate above 25

°C

150

1.2

mW

mW/

°C

Forward Current (DC)

200 Max

mA

Junction Temperature

125 Max

°C

Storage Temperature Range

− 55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING

DIAGRAM

M = Date Code

SOT−363

CASE 419B−01

STYLE 6

http://onsemi.com

30 VOLTS

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Anode 1

6 Cathode

Cathode 3

4 Anode

N/C 2

5 N/C

1

1

6

Device

Package

ORDERING INFORMATION

MBD54DWT1

SOT−363

3000/Tape & Reel

MBD54DWT1G

SOT−363

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.