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TUSB211 Datasheet(PDF) 5 Page - Texas Instruments |
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TUSB211 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 21 page ![]() 5 TUSB211, TUSB211I, TUSB211-Q1 www.ti.com SLLSEO0C – MAY 2015 – REVISED JUNE 2016 Product Folder Links: TUSB211 TUSB211I TUSB211-Q1 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) (1) All typical values are at VCC = 3.3 V, and TA = 25°C. 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT I(ACTIVE_HS) High Speed Active Current USB channel = HS mode. 480 Mbps traffic. VCC supply stable 16 20 mA I(IDLE_HS) High Speed Idle Current USB channel = HS mode. No traffic. VCC supply stable 12 15 mA I(SUSPEND_HS) Suspend Current USB channel = Suspend mode. 4.5 5.5 mA I(FS) Full-Speed Current USB channel = FS mode 4.5 5.5 mA I(LS) Low-Speed Current USB channel = LS mode 4.5 5.5 mA I(DISCONN) Disconnect Power Host side application. No device attachment. 4.5 5.5 mA I(RSTN) Disable Power RSTN driven low; VCC supply stable; VCC = 3.3 V 4.5 5.5 mA RSTN VIH High level input voltage 2 VCC V VIL Low-level input voltage 0 0.8 V IIH High level input current VIH = 3.6 V, VCC = 3 V, RPU enabled ±2 µA IIL Low level input current VIL = 0V, VCC = 3.6 V, RPU enabled ±11 µA EQ R(EQ) External pulldown resistor Level 0 EQ 0.32 k Ω Level 1 EQ 1.4 2.2 k Ω Level 2 EQ [MAX] 3.7 4.1 k Ω Level 3 EQ [MIN] 6 k Ω CD, ENA_HS VOH High level output voltage IO = –50 µA 2.4 V VOL Low level output voltage IO = 50 µA 0.4 V DxP, DxM T(SHRT_GND) DP, DM low voltage short circuit DxP or DxM short circuited to GND continuously for 24 hours at TA = 25°C only 0 V CIO(DXX) Capacitance to GND Measured with LCR meter and device powered down. 1 MHz sinusoid, 30 mVpp ripple 5 pF |
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