M28W320ECT10N1F datasheet(38/53 Pages) STMICROELECTRONICS

38 / 53 page

M28W320ECT, M28W320ECB

38/53

Table 28. CFI Query System Interface Information

Offset

Data

Description

Value

1Bh

0027h

VDD Logic Supply Minimum Program/Erase or Write voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

2.7V

1Ch

0036h

VDD Logic Supply Maximum Program/Erase or Write voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

3.6V

1Dh

00B4h

VPP [Programming] Supply Minimum Program/Erase voltage

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

11.4V

1Eh

00C6h

VPP [Programming] Supply Maximum Program/Erase voltage

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

12.6V

1Fh

0004h

Typical time-out per single word program = 2n µs

16µs

20h

0004h

Typical time-out for Double/ Quadruple Word Program = 2n µs

16µs

21h

000Ah

Typical time-out per individual block erase = 2n ms

22h

0000h

Typical time-out for full chip erase = 2n ms

23h

0005h

Maximum time-out for word program = 2n times typical

512µs

24h

0005h

Maximum time-out for Double/ Quadruple Word Program = 2n times typical

512µs

25h

0003h

Maximum time-out per individual block erase = 2n times typical

26h

0000h

Maximum time-out for chip erase = 2n times typical

M28W320ECT10N1F Datasheet(PDF) 38 Page - STMicroelectronics

M28W320ECT10N1F Datasheet(HTML) 38 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

Datasheet Download

Link URL