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MJD2955 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJD2955
Description  isc Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJD2955 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
MJD2955
DESCRIPTION
·
Excellent Safe Operating Area
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A
·
Complement to Type MJD3055
·
DPAK for Surface Mount Applications
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
-6
A
PC
Collector Power Dissipation @TC=25℃
20
W
Collector Power Dissipation @TC=25℃
1.75
Tj
Junction Tmperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.25
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
71.4
℃
/W


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