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ST26025A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ST26025A
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ST26025A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
ST26025A
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·
High DC Current Gain-
: hFE= 750(Min.)@IC= -10A
·
Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
APPLICATIONS
·
Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.87
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continunous
-20
A
IB
Base Current-Continunous
-1
A
PC
Collector Power Dissipation
@TC=25℃
160
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-55~+200
℃


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