SC-89 datasheet(2/5 Pages) VISHAY

2 / 5 page

Si1013R/X

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71167

S-02464—Rev. A, 25-Oct-00

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

VDS = –16 V, VGS = 0 V

–0.3

–100

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 85_C

–5

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–700

VGS = –4.5 V, ID = –350 mA

0.8

1.2

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –300 m A

1.2

1.6

DS(on)

VGS = –1.8 V, ID = –150 m A

1.8

2.7

Forward Transconductancea

gfs

VDS = –10 V, ID = –250 mA

0.4

Diode Forward Voltagea

VSD

IS = –150 mA, VGS = 0 V

–0.8

–1.2

Dynamicb

Total Gate Charge

1500

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –250 mA

150

Gate-Drain Charge

Qgd

450

Turn-On Delay Time

td(on)

Rise Time

VDD = –10 V, RL = 47 W

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 47 W

ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W

Fall Time

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)

For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.

200

400

600

800

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 3 V

TJ = –55_C

125

2 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1.8 V

2.5 V

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