SI8401DB datasheet(2/5 Pages) VISHAY

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Si8401DB

Vishay Siliconix

www.vishay.com

Document Number: 71674

S-40384—Rev. F, 01-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.45

−0.9

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V

−1

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V, TJ = 70_C

−5

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −4.5 V

−5

Drain Source On State Resistancea

rDS( )

VGS = −4.5 V, ID = −1 A

0.057

0.065

Drain-Source On-State Resistancea

rDS(on)

VGS = −2.5 V, ID = −1 A

0.080

0.095

Forward Transconductancea

gfs

VDS = −10 V, ID = −1 A

Diode Forward Voltagea

VSD

IS = −1 A, VGS = 0 V

−0.73

−1.1

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = −10 V, VGS = −4.5 V, ID = −1 A

2.1

Gate-Drain Charge

Qgd

2.9

Turn-On Delay Time

td(on)

Rise Time

VDD = −10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = −10 V, RL = 10 W

ID ^ −1 A, VGEN = −4.5 V, RG = 6 W

135

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = − A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

2468

VGS = 5 thru 2.5 V

25_C

TC = 125_C

2 V

−55_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

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