IRFZ24N datasheet(1/2 Pages) ISC

Part #	IRFZ24N

Description	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRFZ24N

FEATURES

·

Drain Current –ID=17A@ TC=25℃

·

Drain Source Voltage-

: VDSS= 55V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 0.07Ω(Max)

·

Fast Switching

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

DESCRIPTION

·

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls, these

devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical

and offer additional safety margin against unexpected voltage

transients.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

55

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous@TC=25℃

17

A

Drain Current-Continuous@TC=100℃

12

IDM

Drain Current-Single Pluse

68

A

PD

Total Dissipation @TC=25℃

45

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.3

℃

/W

Rth j-a

Thermal Resistance, Junction to Ambient

62

℃

/W

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