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MBR10150 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MBR10150
Description  Schottky Barrier Rectifier
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MBR10150 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
Schottky Barrier Rectifier
MBR10150
FEATURES
·
Metal silicon junction，majority carrier conduction
·
Low Power Loss/High Efficiency
·
High current capability，low forward voltage drop
·
High surge capability
·
Guardring for overvoltage protection
·
High temperature soldering guaranteed
·
RoHS product
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 125℃
10
A
IFRM
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 125℃
32
A
IFSM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
150
A
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~150
℃
Tstg
Storage Temperature Range
-65~175
℃
dv/dt
Voltage Rate of Change (Rated VR)
10,000
V/μs


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