CJMPD08 datasheet(2/3 Pages) ZPSEMI

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Thermal Resistance from Junction to Ambient (Note1b)

RθJA

173

℃/W

Thermal Resistance from Junction to Ambient (Note1c)

RθJA

℃/W

Thermal Resistance from Junction to Ambient(Note1d)

RθJA

151

℃/W

Junction Temperature

150

Storage Temperature

Tstg

-55 ~+150

℃

Notes:1. RθJA is determined with the device mounted on a 1.5 x 1.5 in. PCB of FR-4 material.

(a) when mounted on a 1 in

2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

(b) when mounted on a minimum pad of 2 oz copper. For single operation.

2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation.

(d) when mounted on a minimum pad of 2 oz copper. For dual operation.

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

On/Off Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-20

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-1

Gate-body leakage current

IGSS

VDS =0V, VGS =±8V

±100

Zero gate voltage drain current

IDSS

VDS =-16V, VGS =0V

-1

µA

VGS =-4.5V, ID =-3.6A

VGS =-2.5V, ID =-3A

VGS =-1.8V, ID =-2A

110

Drain-source on-state resistance (Note 2)

RDS(on)

VGS =-1.5V, ID =-1A

170

mΩ

Forward transconductance (Note 2)

VDS =-10V, ID =-2.7A

5.5

Charges , Capacitances and Gate resistance(Note3)

Input capacitance

Ciss

480

Output capacitance

Coss

Reverse transfer capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

Total gate charge

7.2

Gate-source charge

Qgs

2.2

Gate-drain charge

Qgd

VDS =-4.5V,VGS =-6V,ID =-2.8A

1.2

Switching times (Note3)

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

VDS=-6V,ID=-2.8A,

VGS=-4.5V,RG=6Ω

Source-drain diode characteristics

Forward on voltage (Note2)

VSD

VGS =0V, IS=-1A

-0.8

Notes:

2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

3. These parameters have no way to verify.

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