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MJB44H11 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJB44H11 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor MJB44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 400mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC=8A; IB= 800mA 1.5 V ICEO Collector Cutoff Current VCE= 80V; IE= 0 10 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 uA hFE1 DC Current Gain IC= 2A; VCE= 1V 60 hFE2 DC Current Gain IC= 4A; VCE= 1V 40 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 50 MHz COB Output Capacitance IE=0; VCB= 10V; f= 1.0MHz 130 pF |
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