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MJE13005F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE13005F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor MJE13005F ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.2A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.5 A 0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A ;IB= 1A 1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A ;IB= 0.2A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A ;IB= 0.5 A 1.6 V ICEV Collector Cutoff Current VCEV= 700V; VBE(off)= 1.5V TC= 100℃ 1 5 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 10 60 hFE-2 DC Current Gain IC= 2A; VCE= 5V 8 40 fT Current-Gain—Bandwidth Product IC= 0.5 A; VCE= 10V; 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest = 0.1MHz 65 pF |
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