ACST67S datasheet(6/10 Pages) STMICROELECTRONICS

6 / 10 page

ACST6

6/10

Figure 10: Non repetitive surge peak on-state

current for a sinusoidal pulse with width tp <

10ms, and corresponding value of I2t

Figure 11: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

Figure 12: Relative variation of critical rate of

decrease of main current versus reapplied (dV/

dt)c (typical values)

Figure 13: Relative variation of critical rate of

decrease of main current versus junction tem-

perature

Figure 14: Relative variation of dV/dt immunity

versus junction temperature for different val-

ues of gate to com resistance (gate open is the

reference value)

Figure 15: Thermal resistance junction to

ambient versus copper surface under tab

(printed circuit board FR4, copper thickness:

µm) (D2PAK)

0.01

0.10

1.00

10.00

100

1000

(A), I t (A s)

TSM

t (ms)

T initial=25°C

ITSM

I t

dI/dt limitation:

100A/µs

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

, [T

GT I

] / I

I , I [T =25°C]

T (°C)

QI, QII, I & I

QIII

0.1

1.0

10.0

100.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

T = 125°C

100

125

(dI/dt)c[T ] /

(dI/dt)c[T =125°C]

Tj(°C)

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

= 1kW

Gate open

Rgk = 470W

Rgk < 220W

dV/dt[T ] /

dV/dt[T =125°C]

Tj(°C)

10121416

1820

S(Cu)(cm²)

(°C/W)

th(j-a)

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