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BUV28A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUV28A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV28A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV28A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV28A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
BUV28/A
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUV28
225V(Min)- BUV28A
·
High Switching Speed
APPLICATIONS
·
Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
VBE= 0
BUV28
400
V
BUV28A
450
VCEO
Collector-Emitter Voltage
BUV28
200
V
BUV28A
225
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@ TC=25℃
65
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.92
℃
/W


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