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BUV47FI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUV47FI
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV47FI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUV47FI Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV47FI Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
BUV47FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
400
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 9A; IB= 3A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.6
V
ICER
Collector Cutoff Current
VCE= 850V; RBE=10Ω
VCE= 850V; RBE=10Ω;TC=125℃
0.4
3.0
mA
ICEV
Collector Cutoff Current
VCE= 850V; VBE=-2.5V
VCE= 850V; VBE=-2.5V;Tj= 125℃
0.15
1.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
Switching Times, Resistive Load
ton
Turn-on Time
IC= 6A; IB1=-IB2= 1.2A; VCC= 150V
0.8
μ
s
ts
Storage Time
2.5
μ
s
tf
Fall Time
0.8
μ
s



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