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BUX98B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX98B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BUX98B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ☆ VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 600 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1mA 1000 V ☆ VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 16A ;IB= 3.2A 1.5 V ☆ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 24A ;IB= 5A 5.0 V ☆ VBE(sat) Base-Emitter Saturation Voltage IC= 16A ;IB= 3.2A 1.6 V ICBO Collector Cutoff Current VCB=1000V; IE= 0 VCB=1000V; IE= 0 TC=125℃ 0.4 4 mA ICEO Collector Cutoff Current VCE= 600V; IB= 0 2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE DC Current Gain IC= 1A ; VCE= 5V 15 50 ☆ Pulsed: Pulse duration = 300 ms, duty cycle = 1.5 % Switching Times ton Turn-on Time IC= 16A ;IB1=-IB2= 3.2A; VCC= 150V 1.0 μ s ts Storage Time 3.0 μ s tf Fall Time 0.8 μ s |
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