BUL903ED datasheet(2/2 Pages) ISC

Part #	BUL903ED

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

BUL903ED

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP. MAX UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10 mA

Ib=0

400

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 1 A

IB = 0.15 A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC = 0.1 A;IB = 0.05 A

IC = 0.5 A;IB = 0.1 A

IC = 2.0 A;IB = 0.4 A

1.0

1.1

1.2

ICES

Collector Cutoff Current

VCE = 900 V

IEBO

Emitter Cutoff Current

VEB = 7 V

100

µA

hFE

DC Current Gain

IC = 5 mA;VCE = 10 V

IC = 0.5 A;VCE = 3 V

Fall Time

VCC= 125 V;IC = 0.5 A

IB1 = 0.045 A;IB2 = 0.5 A

tp = 300 µs

0.5

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