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LM1596 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM1596 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page  Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Internal Power Dissipation (Note 1) 500 mW Applied Voltage (Note 2) 30V Differential Input Signal (V7 b V8) g 50V Differential Input Signal (V4 b V1) g (5aI5R0)V Input Signal (V2 b V1 V3 b V4) 50V Bias Current (I5)12 mA Operating Temperature Range LM1596 b55 Cto a125 C LM1496 0 Cto a70 C Storage Temperature Range b 65 Cto a150 C Soldering Information Dual-In-Line Package Soldering (10 seconds) 260 C Small Outline Package Vapor Phase (60 seconds) 215 C Infrared (15 seconds) 220 C See AN-450 ‘‘Surface Mounting Methods and their effects on Product Reliability’’ for other methods of soldering sur- face mount devices Electrical Characteristics (TA e 25 C unless otherwise specified see test circuit) Parameter Conditions LM1596 LM1496 Units Min Typ Max Min Typ Max Carrier Feedthrough VC e 60 mVrms sine wave 40 40 m Vrms fC e 10 kHz offset adjusted VC e 60 mVrms sine wave 140 140 m Vrms fC e 10 kHz offset adjusted VC e 300 mVpp square wave 004 02 004 02 mVrms fC e 10 kHz offset adjusted VC e 300 mVpp square wave 20 100 20 150 mVrms fC e 10 kHz not offset adjusted Carrier Suppression fS e 10 kHz 300 mVrms 50 65 50 65 dB fC e 500 kHz 60 mVrms sine wave offset adjusted fS e 10 kHz 300 mVrms 50 50 dB fC e 10 MHz 60 mVrms sine wave offset adjusted Transadmittance Bandwidth RL e 50X 300 300 MHz Carrier Input Port VC e 60 mVrms sine wave fS e 10 kHz 300 mVrms sine wave Signal Input Port VS e 300 mVrms sine wave 80 80 MHz V7 b V8 e 05Vdc Voltage Gain Signal Channel VS e 100 mVrms fe 10 kHz 25 35 25 35 VV V7 b V8 e 05 Vdc Input Resistance Signal Port f e 50 MHz 200 200 kX V7 b V8 e 05 Vdc Input Capacitance Signal Port f e 50 MHz 20 20 pF V7 b V8 e 05 Vdc Single Ended Output Resistance f e 10 MHz 40 40 kX Single Ended Output f e 10 MHz 50 50 pF Capacitance Input Bias Current (I1 a I4)2 12 25 12 30 m A Input Bias Current (I7 a I8)2 12 25 12 30 m A Input Offset Current (I1 b I4) 07 50 07 50 m A Input Offset Current (I7 b I8) 07 50 50 50 m A Average Temperature (b55 C k TA k a125 C) 20 nA C Coefficient of Input (0 C k TA k a70 C) 20 nA C Offset Current Output Offset Current (I6 b I9) 1450 1460 m A Average Temperature (b55 C k TA k a125 C) 90 nA C Coefficient of Output (0 C k TA k a70 C) 90 nA C Offset Current 2 |
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