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2SD2422 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD2422
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2422 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD2422
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 3A
·
High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
APPLICATIONS
·
High power switching applications
·
Hammer driver,pulse motor driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
Collector Power Dissipation
@ Ta=25℃
2.0
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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