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BD202 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD202
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD202 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BD202/204
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD202
-60V(Min)- BD204
·
Complement to Type BD201/203
APPLICATIONS
·
Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BD202
-60
V
BD204
-60
VCEO
Collector-Emitter Voltage
BD202
-45
V
BD204
-60
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak tp≤10ms
-12
A
ICSM
Collector Current-Peak tp≤2ms
-25
A
IB
Base Current
-3
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃
/W


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