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BD243A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD243A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD243A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BD243/A/B/C
DESCRIPTION
·
DC Current Gain -hFE =30(Min)@ IC= 0.3A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A
80V(Min)- BD243B; 100V(Min)- BD243C
·
Complement to Type BD244/A/B/C
APPLICATIONS
·
Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BD243
55
V
BD243A
70
BD243B
90
BD243C
110
VCEO
Collector-Emitter Voltage
BD243
45
V
BD243A
60
BD243B
80
BD243C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
3
A
PC
Collector Power Dissipation
@ TC=25℃
65
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.92
℃
/W


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