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BD245D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD245D
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD245D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BD245D
DESCRIPTION
·
Excellent Safe Operating Area
·
DC Current Gain-
: hFE>40@IC = 1A
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1 V(Max)@ IC = 3A
·
Designed for Complementary Use with the BD246D
APPLICATIONS
·
Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
80
W
Tj
Junction Tmperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.56
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
42
℃
/W


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