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2N4232A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N4232A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N4232A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N4232A Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N4232A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2N4232A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)*
Collector-Emitter Sustaining Voltage
IC=100mA; IB= 0
60
V
ICEO
Collector Cutoff Current
VCE=50V;IB= 0
1
mA
ICEX
Collector-Emitter Leakage current
VCE=60V,VBE(OFF)=1.5V
0.1
mA
ICBO
Collector Cutoff Current
VCE=60V;IB= 0
50
uA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.5
mA
VCE(sat)-1*
Collector-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
0.7
V
VCE(sat)-2*
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
2.0
V
VCE(sat)-3*
Collector-Emitter Saturation Voltage
IC= 5A; IB=1.25A
4
V
VBE(ON)*
Base-Emitter On Voltage
IC=1.5A;VCE= 2V
1.4
V
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 2V
40
hFE-2*
DC Current Gain
IC= 1.5A; VCE= 2V
25
100
hFE-3*
DC Current Gain
IC= 3A; VCE= 2V
10
hFE-4*
DC Current Gain
IC= 5A; VCE= 4V
4
*:Pulse test:Pulse width=300us,duty cycle≤2%



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