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2N4298 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N4298 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2N4298 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 350 V ICBO Collector Cutoff Current VCE=500V;IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA VCE(sat)* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.9 V VBE(sat)* Base-Emitter Saturation Voltage IC=50mA; IB= 5mA 1.5 V VBE(ON)* Base-Emitter On Voltage IC=0.1A;VCE= 10V 0.9 V hFE-1* DC Current Gain IC= 5mA; VCE= 10V 20 hFE-2* DC Current Gain IC= 50mA; VCE= 10V 25 75 hFE-3* DC Current Gain IC= 0.1A; VCE= 10V 20 *:Pulse test:Pulse width=300us,duty cycle≤2% |
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