SCHOTTKY DIE SPECIFICATION

TYPE: MBR340

40 V 3 A (Low Ir)

Single Anode

SYM

Die Sort UNIT

DC Blocking Voltage:

Ir=1mA(for wafer form)

VRRM

42.5

Volt

Ir=0.5mA (for dice form)

IFAV

Amp

VF MAX

0.55

Volt

IR MAX

0.08

mA

Cj MAX

pF

IFSM

Amp

Tj

°C

TSTG

°C

Specification apply to die only. Actual performance may degrade when assembled.

MEMT does not guarantee device performance after assembly.

Data sheet information is subjected to change without notice.

DIM

um

2

Mil

2

A

1524

60.00

B

1424

56.1

C

1444

56.9

D

254

10

305

12

Micro-Electro-Magnetical Tech Co.

Spec. Limit

40

3

Thickness (Max)

0.1

Top Metal Pad Size

Passivation Seal

Thickness (Min)

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

General Description:

80

-65 to +125

-65 to +125

0.56

@ 3 Amperes,Ta= 25°C

Maximum Instantaneous Reverse Voltage

VR= 40 Volt, Ta=25°C

ELECTRICAL CHARACTERISTICS

Average Rectified Forward Current

Maximum Instantaneous Forward Voltage

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

Operating Junction Temperature

Storage Temperatures

ITEM

Die Size

DICE OUTLINE DRAWING

B

C

A

Top-side Metal

D

SiO2 Passivation

Back-side Metal