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SD3030 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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SD3030 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() SD3030 SCHOTTKY BARRIER RECTIFIER DIODE PRV : 30 Volts IO : 30 Amperes FEATURES : * High current capability * Low forward voltage drop * High surge capacity * Low power loss, High efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : Void-free molded plastic body * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.1 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL UNIT Maximum Recurrent Peak Reverse Voltage VRRM V Maximum Surge Peak Reverse Voltage VRSM V Maximum Average Forward Current, R-Load at Ta = 70 °C (Note 1) Maximum Peak Forward Surge Current, 50 Hz half sine wave Maximum Forward Voltage at IF = 5 A , TJ = 25 °C at IF = 30 A , TJ = 25 °C Maximum Reverse Current at @ (TJ = 25 °C) IR µA at VR = VRRM @ (TJ = 125 °C) IR(H) mA Typical Thermal Resistance Junction to Lead (Note 2) RӨJL K/W Operating Junction Temperature Range TJ (TJ ≤ 200 °C in bupass mode (Note 3)) Storage Temperature Range TSTG °C Notes : (1) Valid, if leads are kept at ambient temperature at a distance of 6 mm from case. (2) Thermal resistance from junction to leas/terminal at distance 0 mm from case. (3) Max. Junction Temperature TJ ≤150 °C(VR ≤80% VRRM) in reverse mode and TJ ≤ 200 °C in bypass mode. Page 1 of 2 Rev. 01 : January 19, 2011 V 0.55 °C - 50 to + 150 RATING IFSM 650 A IF(AV) 30 A VF - 50 to + 175 VALUE 30 30 70 600 0.39 1.0 0.360 (9.1) 0.340 (8.6) D6 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) Dimensions in inches and ( millimetres ) 1.00 (25.4) MIN. 1.00 (25.4) MIN. www.eicsemi.com |
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