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2N6583 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6583
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6583 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N6583
DESCRIPTION
·
Excellent Safe Operating Area
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
·
High Current Capability
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5 V(Max)@ IC = 10A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.17
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃
125
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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