FEDL610Q428-04

ML610Q428/ML610Q429

21/34

OPERATING CONDITIONS OF FLASH ROM

Parameter

Symbol

Condition

Range

Unit

Operating temperature

At write/erase

0 to +40

°C

Operating voltage

At write/erase

*1

2.75 to 3.6

V

At write/erase

*1

2.5 to 2.75

At write/erase

*1

7.7 to 8.3

Write cycles



80

cycles

Data retention



10

years

pin when programming and eraseing Flash ROM.

DC CHARACTERISTICS (1/5)

Parameter

Symbol

Condition

Rating

Unit

Measuring

circuit

Min.

Typ.

Max.

500kHz RC oscillation frequency

1.3 to

3.6V

Ta = 25

°C

Typ.

−10%

500

Typ.

+10%

kHz

1

Ta =

−20 to

+70

°C

Typ.

−25%

500

Typ.

+25%

kHz

PLL oscillation frequency*

4

LSCLK = 32.768kHz

-2.5%

8.192

+2.5%

MHz

Low-speed crystal oscillation

start time*

2





0.3

2

s

500kHz RC oscillation start time





50

500

µs

High-speed crystal oscillation

start time*

3

―

2

20

ms

PLL oscillation start time

―

1

10

Low-speed oscillation stop detect

time

*1



0.2

3

20

Reset pulse width



200





µs

Reset noise elimination

pulse width







0.3

Power-on reset activation

power rise time







10

ms

*1: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the system is reset to shift to

system reset mode.

*

*

*

[Reset pulse width]

[Power-on reset activation power rise time]

RESET_N

VIL1

VIL1

VDD