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2N3790 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N3790 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2N3790 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=-200mA; IB= 0 -80 V IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -5 mA VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A -1.0 V VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V -2.0 V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V -4.0 V hFE-1 DC Current Gain IC= -1A; VCE= -2V 25 90 hFE-2 DC Current Gain IC= -3A; VCE= -2V 15 fT Current Gain-Bandwidth Product IC= -0.5A; VCE= -10V; f= 1.0MHz 4 MHz *:Pulse test:Pulse width=300us,duty cycle≤2% |
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