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3DD5024 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DD5024 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 3DD5024 DESCRIPTION · High Breakdown Voltage- : VCBO= 1500V (Min) · Wide Area of Safe Operation · Built-in Damper Diode APPLICATIONS · Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A IB Base Current- Continuous 4 A ICP Collector Current-Pulse 16 A PC Collector Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Similar Description - 3DD5024 |
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