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TM4EP64CPN Datasheet(PDF) 15 Page - Texas Instruments |
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TM4EP64CPN Datasheet(HTML) 15 Page - Texas Instruments |
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15 / 22 page ![]() TM4EP64BJN, TM4EP64BPN, TM4EP64CJN, TM4EP64CPN 4194304 BY 64-BIT TM4EP72BJN, TM4EP72BPN, TM4EP72CJN, TM4EP72CPN 4194304 BY 72-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS682A – AUGUST 1997– REVISED MARCH 1998 15 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 serial presence detect The serial presence detect (SPD) is contained in a 256-byte Serial EEPROM located on the module. The SPD nonvolatile EEPROM contains various data such as module configuration, DRAM organization, and timing parameters (see Table 1 through Table 4). Only the first 128 bytes are programmed by Texas Instruments, while the remaining 128 bytes are available for customer use. Programming is done through an IIC bus using the clock (SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard. See the Texas Instruments Serial Presence Detect Technical Reference (literature number SMMU001) for further details. SPD contents for the TM4EPxxxxN devices are listed in the following tables: Table 1–TM4EP64BxN Table 2–TM4EP64CxN Table 3–TM4EP72BxN Table 4–TM4EP72CxN Table 1. Serial-Presence-Detect Data for the TM4EP64BxN BYTE FUNCTION DESCRIBED ’4EP64BxN-50 ’4EP64BxN-60 ’4EP64BxN-70 NO. FUNCTION DESCRIBED ITEM DATA ITEM DATA ITEM DATA 0 Defines number of bytes written into serial memory during module manufacturing 128 bytes 80h 128 bytes 80h 128 bytes 80h 1 Total number of bytes of SPD memory device 256 bytes 08h 256 bytes 08h 256 bytes 08h 2 Fundamental memory type (FPM, EDO, SDRAM) EDO 02h EDO 02h EDO 02h 3 Number of row addresses on this assembly 10 0Ah 10 0Ah 10 0Ah 4 Number of column addresses on this assembly 10 0Ah 10 0Ah 10 0Ah 5 Number of module banks on this assembly 1 bank 01h 1 bank 01h 1 bank 01h 6 Data width of this assembly 64 bits 40h 64 bits 40h 64 bits 40h 7 Data width continuation 00h 00h 00h 8 Voltage interface standard of this assembly LVTTL 01h LVTTL 01h LVTTL 01h 9 RASx access time of module tRAC = 50 ns 32h tRAC = 60 ns 3Ch tRAC = 70 ns 46h 10 CASx access time of module tRAC = 13 ns 0Dh tRAC = 15 ns 0Fh tRAC = 18 ns 12h 11 DIMM configuration type (non-parity, parity, ECC) Non-parity 00h Non-parity 00h Non-parity 00h 12 Refresh rate / type 15.6 µs 00h 15.6 µs 00h 15.6 µs 00h 13 DRAM width, primary DRAM x4 04h x4 04h x4 04h 14 Error-checking SDRAM data width N/A 00h N/A 00h N/A 00h 62 SPD revision Rev. 1 01h Rev. 1 01h Rev. 1 01h 63 Checksum for bytes 0 – 62 36 24h 48 30h 61 3Dh 64–71 Manufacturer’s JEDEC ID code per JEP-106E 97h 9700...00h 97h 9700...00h 97h 9700...00h 72 Manufacturing location† TBD TBD TBD 73–90 Manufacturer’s part number† TBD TBD TBD 91 Die revision code† TBD TBD TBD 92 PCB revision code† TBD TBD TBD |
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