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MBRF30150CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRF30150CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBRF30150CT FEATURES · Low power loss,high efficiency · Low forward voltage drop · High frequency operation · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS · The MBRF30150CT is designed for use in high frequency inverters,free wheeling and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 150 V VRWM Working Peak Reverse Voltage 150 V VDC Maximum DC Blocking Voltage 150 V IF(AV) Average Rectified Forward Current Total device Per leg 30 15 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 260 A TJ Junction Temperature -55~150 ℃ IRRM Peak Repetitive Reverse Surge Current (2uS-1Khz) 1.0 A Tstg Storage Temperature Range -55~150 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs |
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