TN0200TS datasheet(2/4 Pages) VISHAY

2 / 4 page

TN0200T/TS

Vishay Siliconix

www.vishay.com

Document Number: 70202

S-40277—Rev. F, 23-Feb-04

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 50 mA

0.5

0.9

1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

0.1

Zero Gate Voltage Drain Current

IDSS

TJ = 85_C

On State Drain Currenta

ID( )

VDS w 5 V, VGS = 4.5 V

2.5

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 2.5 V

1.5

Drain Source On Resistancea

rDS( )

VGS = 4.5 V, ID = 0.6 A

0.29

0.4

Drain-Source On-Resistancea

rDS(on)

VGS = 2.5 V, ID = 0.6 A

0.34

0.5

Forward Transconductancea

gfs

VDS = 5 V, ID = 0.6 A

2.2

Diode Forward Voltagea

VSD

IS = 0.6 A, VGS = 0 V

0.8

1.2

Dynamic

Total Gate Charge

1900

2800

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 0.6 A

Gate-Drain Charge

Qgd

750

Input Capacitance

Ciss

Output Capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

td(on)

Rise Time

VDD = 10 V, RL = 16 W

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 16 W

ID ^ 0.6 A, VGEN = 4.5 V, RG = 6 W

Fall-Time

Notes

Pulse test: PW v300 ms duty cycle v2%.

VNLJ02

TN0200TS Datasheet(PDF) 2 Page - Vishay Siliconix

TN0200TS Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL