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DMN100 Datasheet(PDF) 2 Page - ZP Semiconductor

Part # DMN100
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  2 Pages
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Manufacturer  ZPSEMI [ZP Semiconductor]
Direct Link  http://zpsemi.com/
Logo ZPSEMI - ZP Semiconductor

DMN100 Datasheet(HTML) 2 Page - ZP Semiconductor

  DMN100 Datasheet HTML 1Page - ZP Semiconductor DMN100 Datasheet HTML 2Page - ZP Semiconductor  
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current
Continuous
Pulsed
ID
1.1
4.0
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation
PD
500
mW
Thermal Resistance, Junction to Ambient
RθJA
250
K/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
30
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
@ TJ = 25°C
@ TJ = 125°C
IDSS
—
—
1.0
10
μA
VDS = 24V, VGS = 0V
Gate-Body Leakage
IGSS
—
—
± 100
nA
VGS = ± 12V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
1.0
—
3.0
V
VDS = 10V, ID = 1.0mA
Static Drain-Source On-Resistance
RDS (ON)
—
—
0.170
0.150
Ω
VGS = 4.5V, ID = 0.5A
VGS = 10V, ID = 1.0A
Forward Transconductance
gFS
1.3
2.4
⎯
S
VDS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
—
150
—
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
—
90
—
pF
Reverse Transfer Capacitance
Crss
—
30
—
pF
Total Gate Charge
Qg
—
5.5
—
nC
VDS = 24V, ID = 1.0A,
VGS = 10V
Gate-to-Source Charge
Qgs
—
0.8
—
nC
Gate-to-Drain Charge
Qgd
—
1.3
—
nC
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
—
10
—
ns
VDD = 10V, ID = 0.5A,
VGS = 5.0V, RGEN = 50Ω
Turn-Off Delay Time
tD(OFF)
—
25
—
ns
Turn-On Rise Time
tr
—
15
—
ns
Turn-Off Fall Time
tf
—
45
—
ns
SOURCE-DRAIN RATINGS (BODY DIODE)
Continuous Source Current
IS
—
—
0.54
A
—
Pulse Source Current
ISM
—
—
4.0
A
—
Forward Voltage
VSD
—
—
1.2
V
IF = 1.0A, VGS = 0V
Reverse Recovery Time
trr
—
35
—
ns
IF = 1.0A, di/dt = 50A/μs
Notes:
2. Pulse width
≤ 300μs, duty cycle ≤ 2%.
DMN100
N-CHANNEL ENHANCEMENT MODE MOSFET
2 of 2
sales@zpsemi.com
www.zpsemi.com



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