BFP450 datasheet(11/28 Pages) INFINEON

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BFP450

Electrical Characteristics

Datasheet

Revision 1.2, 2013-07-29

Electrical Characteristics

5.1

DC Characteristics

5.2

General AC Characteristics

Table 5-1

DC Characteristics at TA =25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Collector emitter breakdown voltage

V(BR)CEO

4.5

–

IC =1mA, IB =0

Open base

Collector emitter leakage current

ICES

––

11)

1) Maximum values not limited by the device but the short cycle time of the 100% test

μA

VCE =15V, VBE =0

–1

301)

VCE =3V, VBE =0

E-B short circuited

Collector base leakage current

ICBO

–1

301)

VCB =3V, IE =0

Open emitter

Emitter base leakage current

IEBO

–0.05

31)

μA

VEB =0.5 V, IC =0

Open collector

DC current gain

hFE

130

VCE =4V, IC =50mA

120

VCE =3V, IC =90mA

Pulse measured

Table 5-2

General AC Characteristics at TA =25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Transition frequency

–

GHz

VCE =3V, IC =90mA,

f =1GHz

Collector base capacitance

CCB

–

0.48

0.8

VCB =3V, VBE =0 V

f =1MHz

Emitter grounded

Collector emitter capacitance

CCE

–1.2

–pF

VCE =3V, VBE =0 V

f =1MHz

Base grounded

Emitter base capacitance

CEB

–1.7

–pF

VEB =0.5 V, VCB =0 V

f =1MHz

Collector grounded

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