HC4468 datasheet(1/4 Pages) HUASHAN

Part #	HC4468

Description	Audio and General purpose.

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ APPLICATIONS

●

Audio and General purpose.

●

Complementary to HA1695.

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

Collector-Base Breakdown Voltage

200

V

IC=100μA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

140

V

IC=50mA, IB=0

BVEBO

Emitter-Base Breakdown Voltage

6

V

IE=100μA, IC=0

ICBO

Collector Cut-off Current

10

μA

VCB=200V, IE=0

IEBO

Emitter Cut-off Current

10

μA

VEB=6V, IC=0

HFE（1） DC Current Gain

50

180

VCE=4V, IC=3A

VCE(sat)

Collector- Emitter Saturation Voltage

0.5

V

IC=5A, IB=0.5A

fT

Current Gain-Bandwidth Product

20

MHz

VCE=12V, IE=-0.5A

Cob

Output Capacitance

250

pF

VCB=10V, IE=0, f=1MHz

█ hFE(1) Classification

O

P

Y

50 - 100

70 - 140

90 – 180

Tstg——Storage Temperature………………………… -65~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation（Tc=25℃）…………………………100W

VCBO——Collector-Base Voltage………………………………200V

VCEO——Collector-Emitter Voltage……………………………140V

VEBO——Emitter-Base Voltage………………………………………6V

IC——Collector Current（DC）………………………………………10A

Ib——Base Current………………………………………………4A

1―Base，B

2―Collector，C

3―Emitter，E

TO-3P

HC4468

NPN SILICON TRANSISTOR

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HC4468 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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