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2SA1046 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1046 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Darlington Power Transistor 2SA1046 DESCRIPTION · High Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) · High Current Capability · Wide Area of Safe Operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power switching applications · High frequency power amplifier · DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -5 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
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