AUIRLR024Z datasheet(2/12 Pages) INFINEON

2 / 12 page

AUIRLR/U024Z

2015-12-11

Notes:





Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)



Limited by TJmax , starting TJ = 25°C, L = 0.54mH, RG = 25, IAS = 9.6A, VGS =10V. Part not recommended for use above this value.



Pulse width

1.0ms; duty cycle  2%.



Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS



Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.



This value determined from sample failure population, starting TJ = 25°C, L = 0.54mH, RG = 25, IAS = 9.6A, VGS =10V.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994



R is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ

Breakdown Voltage Temp. Coefficient

––– 0.053 –––

V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

VGS = 10V, ID = 9.6A 

–––

VGS = 5.0V, ID = 5.0A 

–––

100

VGS = 4.5V, ID = 3.0A 

VGS(th)

Gate Threshold Voltage

1.0

–––

3.0

VDS = VGS, ID = 250µA

gfs

Forward Trans conductance

7.4

–––

VDS = 25V, ID = 9.6A 

IDSS

Drain-to-Source Leakage Current

–––

µA

VDS = 55V, VGS = 0V

–––

250

VDS = 55V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

200

VGS = 16V

Gate-to-Source Reverse Leakage

–––

-200

VGS = -16V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Total Gate Charge

–––

6.6

9.9

ID = 5.0A

Qgs

Gate-to-Source Charge

–––

1.6

–––

VDS = 44V

Qgd

Gate-to-Drain Charge

–––

3.9

–––

VGS = 5.0V

td(on)

Turn-On Delay Time

–––

8.2

–––

VDD = 28V

Rise Time

–––

ID = 5.0A

td(off)

Turn-Off Delay Time

–––

RG = 28

Fall Time

–––

VGS = 5.0V

Internal Drain Inductance

–––

4.5

–––

Between lead,

6mm (0.25in.)

Internal Source Inductance

–––

7.5

–––

from package

and center of die contact

Ciss

Input Capacitance

–––

380

–––

VGS = 0V

Coss

Output Capacitance

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

ƒ = 1.0MHz

Coss

Output Capacitance

–––

180

–––

VGS = 0V, VDS = 1.0V ƒ = 1.0MHz

Coss

Output Capacitance

–––

VGS = 0V, VDS = 44V ƒ = 1.0MHz

Coss eff.

Effective Output Capacitance

–––

VGS = 0V, VDS = 0V to 44V 

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

–––

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C,IS = 9.6A, VGS = 0V 

trr

Reverse Recovery Time

–––

ns TJ = 25°C ,IF = 9.6A, VDD = 28V

Qrr

Reverse Recovery Charge

–––

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



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