LR024N datasheet(2/11 Pages) INFINEON

2 / 11 page

AUIRLR/U024N

2015-10-29

Notes:





Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)



VDD = 25V, starting TJ = 25°C, L = 790µH, RG = 25, IAS = 11A, VGS =10V. (See Fig.12)



ISD 11A, di/dt 290A/µs, VDD V(BR)DSS, TJ  175°C.



Pulse width

300µs; duty cycle  2%.



This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .



Uses IRFZ24N data and test conditions.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ

Breakdown Voltage Temp. Coefficient

––– 0.061 –––

V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

––– 0.065

VGS = 10V, ID = 10A 

–––

––– 0.080

VGS = 5.0V, ID = 10A 

–––

––– 0.110

VGS = 4.0V, ID = 9.0A 

VGS(th)

Gate Threshold Voltage

1.0

–––

2.0

VDS = VGS, ID = 250µA

gfs

Forward Trans conductance

8.3

–––

VDS = 25V, ID = 11A 

IDSS

Drain-to-Source Leakage Current

–––

µA

VDS = 55 V, VGS = 0V

–––

250

VDS = 44V,VGS = 0V,TJ =150°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 16V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -16V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Total Gate Charge

–––

ID = 11A

Qgs

Gate-to-Source Charge

–––

3.7

VDS = 44V

Qgd

Gate-to-Drain Charge

–––

8.5

VGS = 5.0V, See Fig 6 and 13 

td(on)

Turn-On Delay Time

–––

7.1

–––

VDD = 28V

Rise Time

–––

ID = 11A

td(off)

Turn-Off Delay Time

–––

RG = 12VGS = 5.0V

Fall Time

–––

RD = 2.4See Fig 10 

Internal Drain Inductance

–––

4.5

–––

Between lead,

6mm (0.25in.)

Internal Source Inductance

–––

7.5

–––

from package

and center of die contact

Ciss

Input Capacitance

–––

480

–––

VGS = 0V

Coss

Output Capacitance

–––

130

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

ƒ = 1.0MHz, See Fig. 5 

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

–––

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C,IS = 11A,VGS = 0V 

trr

Reverse Recovery Time

–––

ns TJ = 25°C ,IF = 11A

Qrr

Reverse Recovery Charge

–––

130

200

di/dt = 100A/µs 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



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