2SB786 datasheet(2/2 Pages) ISC

Part #	2SB786

Description	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Darlington Power Transistor

2SB786

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBO

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0

-40

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -2mA; IC= 0

-5

V(BR)CBO

Collector-Base breakdown voltage

IC=-1mA; IE= 0

-40

VCE(sat)

Collector-Emitter Saturation Voltage IC= -0.6A; IB= -1.2mA

-1.5

ICEO

Collector Cutoff Current

VCE= -40V; IB= 0

-0.1

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2.0

hFE

DC Current Gain

IC= -0.5A ; VCE= -3V

1000

Current-Gain—Bandwidth Product

IC=-0.1A ; VCE= -6V

150

MHz

COB

Output Capacitance

IE=0; VCB= -10V; f= 1MHz

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