SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N1708, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

SB520

SB530

SB550

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB520

SB530

SB550

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

20

30

50

V

Average Rectified Output Current

(Note 1)

Io

5.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

120

A

Forward Voltage

0.55

0.70

V

Peak Reverse Current

At Rated DC Blocking Voltage

0.5

20

mA

Typical Junction Capacitance (Note 2)

Cj

550

400

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

25

K/W

Typical Thermal Resistance Junction to Lead (Note 3)

8

K/W

Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Approximate Weight

wt

1.02

g

Case Style

DO-201AD

Note:1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance junction to lead vertical P.C.B. mounted, 0.375” (9.5mm) lead length.