| Electronic Components Datasheet Search |
|
BFS481 Datasheet(PDF) 3 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
BFS481 Datasheet(HTML) 3 Page - Infineon Technologies AG |
|
3 / 6 page ![]() 2013-06-18 3 BFS481 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.23 0.4 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.13 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.4 - Minimum noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz NFmin - - 0.9 1.2 - - dB Power gain, maximum stable1) IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 20 - dB Power gain, maximum available2) IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 15 - dB Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz |S21e|2 - - 16 11 - - dB 1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2) |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |