BSC024NE2LS datasheet(4/12 Pages) INFINEON

4 / 12 page

OptiMOS™ Power-MOSFET

BSC024NE2LS

Electrical characteristics

Final Data Sheet

2.1, 2011-09-20

Electrical characteristics

Electrical characteristics, at

Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

(BR)DSS

GS=0 V, ID=1 mA

Gate threshold voltage

GS(th)

1.2

DS=VGS, ID=250 µA

Zero gate voltage drain current

DSS

-0.1

µA

DS=25 V, VGS=0 V,

j=25 °C

100

DS=25 V, VGS=0 V,

j=125 °C

Gate-source leakage current

GSS

100

GS=20V, VDS=0 V

Drain-source on-state resistance

DS(on)

-2.7

3.4

GS=4.5 V, ID=30A,

-2

2.4

GS=10 V, ID=30 A,

Gate resistance

-0.9

Transconductance

110

DS|>2|ID|RDS(on)max,

D=30 A

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

iss

-1700

GS=0 V, VDS=12 V,

f=1 MHz

Output capacitance

oss

-650

Reverse transfer capacitance

rss

-71

Turn-on delay time

d(on)

-4.1

DD=12 V, VGS=10V,

D=30 A, RG=1.6 Ω

Rise time

-3.6

Turn-off delay time

d(off)

-19

Fall time

-2.6

BSC024NE2LS Datasheet(PDF) 4 Page - Infineon Technologies AG

BSC024NE2LS Datasheet(HTML) 4 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL