1 - 4

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

V

DGR

T

J

= 25

°C to 150°C; R

900

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

10N90

10

A

12N90

12

A

13N90

13

A

I

DM

T

C

= 25

°C,

10N90

40

A

pulse width limited by T

JM

12N90

48

A

13N90

13

A

I

AR

T

C

= 25

°C

10N90

10

A

12N90

12

A

13N90

13

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

£ I

5

V/ns

T

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

900

V

V

GS(th)

V

DS

= V

2.0

4.5

V

I

GSS

V

±100 nA

I

DSS

V

DS

= V

DSS

T

mA

V

T

mA

R

DS(on)

V

10N90

1.1

W

12N90

0.9

W

13N90

0.8

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

TO-247 AD (IXFH)

TO-204 AA (IXFM)

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Features

l

International standard packages

l

Low R

l

Rugged polysilicon gate cell structure

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

l

Fast intrinsic Rectifier

Applications

l

DC-DC converters

l

Synchronous rectification

l

Battery chargers

l

Switched-mode and resonant-mode

power supplies

l

DC choppers

l

AC motor control

l

Temperature and lighting controls

l

Low voltage relays

Advantages

l

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

l

Space savings

l

High power density

D

G

V

DSS

I

D25

R

DS(on)

IXFH/IXFM10N90

900 V

10 A

1.1

W

IXFH/IXFM12N90

900 V

12 A

0.9

W

IXFH13N90

900 V

13 A

0.8

W

t

91530G (3/98)

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.