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MBR4040PT Datasheet(PDF) 1 Page - Lite-On Technology Corporation |
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MBR4040PT Datasheet(HTML) 1 Page - Lite-On Technology Corporation |
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1 / 2 page  MBR4030PT thru 4060PT MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications MECHANICAL DATA Case : TO-3P molded plastic Polarity : As marked on the body Weight : 0.2 ounces, 5.6 grams Mounting position : Any VRMS VDC VRRM I(AV) IFSM VF MBR 4030PT 30 21 30 Maximum Average Forward Rectified Current (See Fig.1) @TC =125 C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Forward Voltage (Note 1) 40 400 0.70 0.60 0.80 0.75 TJ Operating Temperature Range -55 to +150 C TSTG Storage Temperature Range -55 to +175 C Typical Thermal Resistance (Note 2) 1.4 C/W TJ =25 C CJ Typical Junction Capacitance per element (Note 3) 700 pF IR @TJ =125 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C 100 mA A A V UNIT V V CHARACTERISTICS SYMBOL Voltage Rate of Change (Rated VR) TJ =125 C R0JC dv/dt 10000 V/us IF =20A @ IF =20A @ IF =40A @ IF =40A @ MBR 4035PT 35 24.5 35 MBR 4040PT 40 28 40 MBR 4045PT 45 31.5 45 MBR 4050PT 50 35 50 MBR 4060PT 60 42 60 V 0.80 0.70 - - 1.0 TO-3P PIN 1 PIN 3 PIN 2 CASE E L Q P N M F C B A O K J I H G D L PIN 1 2 3 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 40 Amperes NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. TJ =25 C TJ =125 C All Dimensions in millimeter DIM. A C D E F G B M L K J I H O P N Q TO-3P MIN. MAX. 15.75 16.25 21.75 21.25 19.60 20.10 4.38 3.78 1.88 2.08 4.87 5.13 1.90 2.16 1.22 1.12 2.90 3.20 5.20 5.70 2.10 2.40 0.76 0.51 2.93 3.22 1.93 2.18 20 TYP 4.4TYP. 4.4TYP. 10 TYP SEMICONDUCTOR LITE-ON REV. 2, 01-Dec-2000, KTH11 |
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