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K3053 Datasheet(PDF) 1 Page - NEC |
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K3053 Datasheet(HTML) 1 Page - NEC |
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1 / 8 page  © 1999, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark ! ! ! ! shows major revised points. DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. FEATURES • Low On-State Resistance RDS(on)1 = 45 m Ω MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 m Ω MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Gate to Source Voltage VGSS(DC) +20, −10 V Drain Current (DC) ID(DC) ±25 A Drain Current (Pulse) Note1 ID(pulse) ±75 A Total Power Dissipation (TC = 25°C) PT 30 W Total Power Dissipation (TA = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 12.5 A Single Avalanche Energy Note2 EAS 15.6 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 30 V , RG = 25 Ω, VGS = 20 V → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3053 Isolated TO-220 (Isolated TO-220) ! |
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