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LE25U40CMC Datasheet(PDF) 17 Page - ON Semiconductor

Part # LE25U40CMC
Description  Serial Flash Memory
PDF  24 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

LE25U40CMC Datasheet(HTML) 17 Page - ON Semiconductor

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LE25U40CMC
www.onsemi.com
17
Specifications
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
unit
Maximum supply voltage
VDD max
With respect to VSS
0.5 to +4.6
V
DC voltage (all pins)
VIN/VOUT
With respect to VSS
0.5 to VDD+0.5
V
Storage temperature
Tstg
55 to +150
C
Operating Conditions
Parameter
Symbol
Conditions
Ratings
unit
Operating supply voltage
VDD
2.3 to 3.6
V
Operating ambient temperature
Topr
40 to 85
C
Allowable DC Operating Conditions
Parameter
Symbol
Conditions
Ratings
unit
min
typ
max
Read mode operating current
ICCR
SCK=0.1VDD/0.9VDD,
HOLD=WP=0.9VDD,
Output = open
Single
25MHz
6
mA
40MHz
10
Dual
40MHz
12
mA
Write mode operating current
(erase + page program)
ICCW
tSSE= tSE= tCHE=typ.,tPP=max
15
mA
CMOS standby current
ISB
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
50
A
Power-down standby current
IDSB
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
10
A
Input leakage current
ILI
2
A
Output leakage current
ILO
2
A
Input low voltage
VIL
0.3
0.3VDD
V
Input high voltage
VIH
0.7VDD
VDD+0.3
V
Output low voltage
VOL
IOL=100A, VDD=VDD min
0.2
V
IOL=1.6mA, VDD=VDD min
0.4
Output high voltage
VOH
IOH=100A, VDD=VDD min
VDD0.2
V
Data hold, Rewriting frequency
Parameter
condition
min
max
unit
Rewriting frequency
Program/Erase
100,000
times/ Sector
Status resister write
1,000
times
Data hold
20
year
Pin Capacitance at Ta=25
C, f=1MHz
Parameter
Symbol
Conditions
Ratings
unit
max
Output pin capacitance
CSO
VSO=0V
12
pF
Input pin Capacitance
CIN
VIN=0V
6
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values
for some of the sampled devices.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.



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