INCHANGE Semiconductor

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isc Triacs

BTB04 T/D/S/A

FEATURES

·

With TO-220AB non insulated package

·

Suitables for general purpose applications where gate high sensitivity is

required. Application on 4Q such as phase control and static switching.

SYMBOL

PARAMETER

MIN

UNIT

4

A

40

A

Operating junction temperature

110

℃

Storage temperature

-45~150

℃

Thermal resistance, junction to case

3.2

℃

/W

Thermal resistance, junction to ambient

60

℃

/W

SYMBOL

PARAMETER

400T/D/S/A

600T/D/S/A

700T/D/S/A

UNIT

Repetitive peak off-state voltage

400

600

700

V

Repetitive peak reverse voltage

400

600

700

V

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

Repetitive peak reverse current

0.01

0.75

mA

Repetitive peak off-state current

0.01

0.75

mA

Gate trigger current

Ⅰ

-Ⅱ-Ⅲ

T

D

S

A

mA

5

5

10

10

Ⅳ

5

10

10

25

Holding current

15

15

25

25

mA

1.5

V

On-state voltage

1.65

V