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C106M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # C106M
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C106M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  C106M Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
C106M
FEATURES
·
Glassivated surface for reliability and uniformity
·
Practical level triggering and holding characteristics
·
Designed for high volume consumer applications such as
temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation
Is important.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak off-state voltage
600
V
IT(AV)
Average on-state current
2.5
A
IT(RMS)
RMS on-state current
4
A
PGM
Peak gate power
0.5
W
PG(AV)
Average gate power
0.2
W
ITSM
Non-repetitive peak on-state current
20
A
Tj
Operating junction temperature
110
℃
Tstg
Storage temperature
-40~+ 150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRRM=600V
VRRM=600V, Tj= 125℃
10
200
μ
A
IDRM
Repetitive peak off-state current
VDRM=600V
VDRM=600V, Tj= 125℃
10
200
μ
A
IGT
Gate trigger current
VD= 6V; RL=100Ω, RGK=1KΩ
10
200
μ
A
VTM
On-state voltage
IT= 8A
1.75
V
IH
Holding current
VD=24V, RGK=1KΩ, ITM=4A
5
mA
VGT
Gate trigger voltage
VD= 12V; RL=100Ω, RGK=1KΩ
0.8
V
TO-126


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